Process Development Engineer
Company Name:
Career Development Partners
As a Sr. Process Development Engineer, you will work in a dynamic team environment, reporting to the Process Development Supervisor on the Technology Development team at the leading technology fabrication facility located in Gresham, Oregon. This position will have direct contact with the Process Engineering Managers responsible for sustaining and ramping technologies after qualification.
In this role you will:
o Perform unit process and module development for ASIC and power FET technologies to support automotive and consumer business segments, including:
- Embedded memory at 180 nm and 90 nm nodes.
- Medium and high voltage analog ASIC, deep trench and junction isolated as well as super-junction devices.
- Integration of devices and circuits on SOI, GaN, SiC and other compound semiconductors.
o Work with technology development leaders to define process architectures that meet manufacturing requirements.
o Work with manufacturing counterparts to coordinate unit process and module development and characterization that meet manufacturing requirements.
o Process TCAD as required.
o Support manufacturing ramp and industrialization after technology qualification.
Position Requirements
Formal Education required:
o Master's or PhD preferred; equivalent education/experience considered.
o Physics or material science considered.
Experience required:
o 10 years in a development role.
o 5 years additional manufacturing experience preferred.
o Experience in at least one of the following areas:
- Diffusion including thermal processes (oxidation, LPCVD, EPI).
- Wet processes, including single wafer cleans and etches.
- Plasma etch, in particular poly-silicon and metal (Al, Cu, Ti, TiN, W, Ag).
- Metallurgy, PVD, MOCVD and ALD processes.
Specific Skills required:
o Understanding of state of the art manufacturing tools for silicon based technologies, 90 or 65 nm experience preferred.
- EEPROM and embedded FLASH.
- High voltage and super-junction devices.
- Low voltage power FET discrete devices.
- Familiarity with specialized tools used for GaN, SiC, compound semiconductors.
o Process TCAD, Sentaurus preferred.
o Demonstrated project team skills from proof of concept through qualification.
o Demonstrated ability to meet aggressive schedules, including risk assessment and mitigation.
o Transitioning technologies from qualification to high volume manufacturing.
o Able to effectively work between development group and manufacturing engineers.
o Ownership initiative.
o Ability to aggressively start and complete projects.
o Ability to rapidly understand problems, implement containment and drive to resolution.
o Familiarity with industrialization practices and techniques.
Estimated Salary: $20 to $28 per hour based on qualifications.
Career Development Partners
As a Sr. Process Development Engineer, you will work in a dynamic team environment, reporting to the Process Development Supervisor on the Technology Development team at the leading technology fabrication facility located in Gresham, Oregon. This position will have direct contact with the Process Engineering Managers responsible for sustaining and ramping technologies after qualification.
In this role you will:
o Perform unit process and module development for ASIC and power FET technologies to support automotive and consumer business segments, including:
- Embedded memory at 180 nm and 90 nm nodes.
- Medium and high voltage analog ASIC, deep trench and junction isolated as well as super-junction devices.
- Integration of devices and circuits on SOI, GaN, SiC and other compound semiconductors.
o Work with technology development leaders to define process architectures that meet manufacturing requirements.
o Work with manufacturing counterparts to coordinate unit process and module development and characterization that meet manufacturing requirements.
o Process TCAD as required.
o Support manufacturing ramp and industrialization after technology qualification.
Position Requirements
Formal Education required:
o Master's or PhD preferred; equivalent education/experience considered.
o Physics or material science considered.
Experience required:
o 10 years in a development role.
o 5 years additional manufacturing experience preferred.
o Experience in at least one of the following areas:
- Diffusion including thermal processes (oxidation, LPCVD, EPI).
- Wet processes, including single wafer cleans and etches.
- Plasma etch, in particular poly-silicon and metal (Al, Cu, Ti, TiN, W, Ag).
- Metallurgy, PVD, MOCVD and ALD processes.
Specific Skills required:
o Understanding of state of the art manufacturing tools for silicon based technologies, 90 or 65 nm experience preferred.
- EEPROM and embedded FLASH.
- High voltage and super-junction devices.
- Low voltage power FET discrete devices.
- Familiarity with specialized tools used for GaN, SiC, compound semiconductors.
o Process TCAD, Sentaurus preferred.
o Demonstrated project team skills from proof of concept through qualification.
o Demonstrated ability to meet aggressive schedules, including risk assessment and mitigation.
o Transitioning technologies from qualification to high volume manufacturing.
o Able to effectively work between development group and manufacturing engineers.
o Ownership initiative.
o Ability to aggressively start and complete projects.
o Ability to rapidly understand problems, implement containment and drive to resolution.
o Familiarity with industrialization practices and techniques.
Estimated Salary: $20 to $28 per hour based on qualifications.
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